摘要： The recently discovered HfO2-based ferroelectric materials have drawn much attention owing to their high CMOS-compatibility and scalability. A fully CMOS-compatible Al-doped HfO2-based metalferroelectric-insulator-semiconductor field-effect-transistor (MFIS-FET) was fabricated for the first time.The electrical properties, including I-V and C-V characteristics, of the MFIS-FET were characterized. A subthreshold swing of 27 mV/decade is achieved in the n-channel MFIS-FET with TiN/Al-doped HfO2/SiO2/Si gate stack. The gate leakage current was also addressed. It is derived that the Poole-Frenkel effect should be the conduction mechanism of the gate leakage current in the Al-doped HfO2-based MFISFET.